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CM2305 - P-Channel 20V(D-S) Power MOSFET

General Description

Applications CM2305 is the P-Channel enhancement mode power field

effect transistors with high cell density, trench technology.

Personal Digital Assistants This high density process and design have been optimized Portable Instrumentation switchin

Key Features

  • Marking Information.
  • VDS: -20V.
  • ID: -4.4A.
  • RDSON (@VGS=-4.5V) : < 42mΩ.
  • RDSON (@VGS=-2.5V) : < 55mΩ.
  • RDSON (@VGS=-1.8V) : < 75mΩ.
  • High density cell design for extremely low RDSON.
  • Excellent on-resistance and DC current capability Equivalent Circuit and Pin Configuration 1CXX Device Code = 1C Date Code = XX Ordering Information SOT-23 (Top View) Part Number Packaging CM2305 3000/Tape & Reel Reel Size 7 inch Absolute Maximum Ratings (TA=25 ℃ unless oth.

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Datasheet Details

Part number CM2305
Manufacturer Applied Power Microelectronics
File Size 1.20 MB
Description P-Channel 20V(D-S) Power MOSFET
Datasheet download datasheet CM2305 Datasheet

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Full PDF Text Transcription (Reference)

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CM2305 P-Channel 20V(D-S) Power MOSFET Description Applications CM2305 is the P-Channel enhancement mode power field  Cellular Handsets and Accessories effect transistors with high cell density, trench technology.  Personal Digital Assistants This high density process and design have been optimized  Portable Instrumentation switching performance and especially tailored to minimize  Load switch on-state resistance. Features Marking Information  VDS: -20V  ID: -4.4A  RDSON (@VGS=-4.5V) : < 42mΩ  RDSON (@VGS=-2.5V) : < 55mΩ  RDSON (@VGS=-1.