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CM4435 - P-Channel 30V Power MOSFET

General Description

Applications The CM4435 is the P-Channel enhancement mode power Cellular Handsets and Accessories field effect transistors with high cell density, trench tech-

Personal Digital Assistants nology.

Portable Instrumentation optimized sw

Key Features

  • VDS: -30V.
  • ID: -8.5A.
  • RDSON(@VGS=-10V) : < 23mΩ.
  • RDSON (@VGS=-4.5V) : < 34mΩ.
  • High density cell design for extremely low RDSON.
  • Excellent on-resistance and DC current capability Marking Information CM4435 XXXX Marking Code = CM4435 Date Code = XXXX Equivalent Circuit and Pin Configuration SO-8 Ordering Information Part Number Packaging CM4435 2500/Tape & Reel Reel Size 13 inch Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted) Parameter Drain-sou.

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Datasheet Details

Part number CM4435
Manufacturer Applied Power Microelectronics
File Size 1.16 MB
Description P-Channel 30V Power MOSFET
Datasheet download datasheet CM4435 Datasheet

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CM4435 P-Channel 30V (D-S) Power MOSFET Description Applications The CM4435 is the P-Channel enhancement mode power  Cellular Handsets and Accessories field effect transistors with high cell density, trench tech-  Personal Digital Assistants nology. This high density process and design have been  Portable Instrumentation optimized switching performance and especially tailored to  Load switch minimize on-state resistance. Features  VDS: -30V  ID: -8.5A  RDSON(@VGS=-10V) : < 23mΩ  RDSON (@VGS=-4.