Applied Power Microelectronics CM4435
The CM4435 is the P-Channel enhancement mode power Cellular Handsets and Accessories field effect transistors with high cell density, trench tech- Personal Digital Assistants nology. This high density process and design have been Portable Instrumentation optimized switching performance and especially tailored to Load switch minimize on-state resistance.DESCRIPTION
APPLICATIONS
The CM4435 is the P-Channel enhancement mode power● Cellular Handsets and Accessories field effect transistors with high cell density, trench tech-
● Personal Digital Assistants nology. This high density process and design have been
● Portable Instrumentation optimized switching performance and especially tailored to
● Load switch minimize on-state resistance.
FEATURES
● VDS: -30V● ID: -8.5A
● RDSON(@VGS=-10V) : < 23mΩ
● RDSON (@VGS=-4.5V) : < 34mΩ
● High density cell design for extremely low RDSON
● Excellent on-resistance and DC current capability Marking Information CM4435 XXXX Marking Code = CM4435 Date Code = XXXX Equivalent Circuit and Pin Configuration SO-8 Ordering Information Part Number Packaging CM4435 2500/Tape & Reel Reel Size 13 inch
ABSOLUTE MAXIMUM RATINGS
(TA=25 ℃ unless otherwise noted) Parameter Drain-source Voltage Gate-source Voltage Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current (1) Total Power Dissipation @ TA=25°C (2) Thermal Resistance Junction-to-Ambient (2) Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RθJA TJ,TSTG Maximum -30 ±20 -8.5 -6.8 -34 2.