CM4435 Datasheet | Applied Power Microelectronics

Description Applications The CM4435 is the P-Channel enhancement mode power - Cellular Handsets and Accessories field effect transistors with high cell density, trench tech- - Personal Digital Assistants nology. This high density process and design have been - Portable Instrumentation optimized switching performance and especially tailored to - Load switch minimize on-state resistance. Features - VDS: -30V - ID: -8.5A - RDSON(@VGS=-10V) : < 23mΩ - RDSON (@VGS=-4.5V) : < 34mΩ - High density cell design for extremely low RDSON - Excellent on-resistance and DC current capability Marking Information CM4435 XXXX Marking Code = CM4435 Date Code = XXXX Equivalent Circuit and Pin Configuration SO-8 Ordering Information Part Number Packaging CM4435 2500/Tape & Reel Reel Size 13 inch Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted) Parameter Drain-source Voltage Gate-source Voltage Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current (1) Total Power Dissipation @ TA=25°C (2) Thermal Resistance Junction-to-Ambient (2) Junction and Storage Temperature Range Symbol VDS VGS IDM PD RθJA TJ,TSTG Maximum -30 ±20 -8.5 -6.8 -34 2.5 50 -55 to +150 Unit V V A A A...