CMN4012S9 Overview
Applications CMN4012S9 is the N-Channel enhancement mode power Cellular Handsets and Accessories field effect transistors with high cell density, trench tech- Personal Digital Assistants nology. This high density process and design have been Portable Instrumentation optimized switching performance and especially tailored to Load switch minimize on-state resistance.
CMN4012S9 Key Features
- VDS: 40V
- ID: 23.6A
- RDSON (@VGS=10V) : < 15mΩ
- RDSON (@VGS=4.5V) : < 23mΩ
- High density cell design for extremely low RDSON
- Excellent on-resistance and DC current capability