• Part: CMN4012S9
  • Manufacturer: Applied Power Microelectronics
  • Size: 1.23 MB
Download CMN4012S9 Datasheet PDF
CMN4012S9 datasheet preview
CMN4012S9 page 2
Page 2
CMN4012S9 page 3
Page 3

CMN4012S9 Key Features

  • VDS: 40V
  • ID: 23.6A
  • RDSON (@VGS=10V) : < 15mΩ
  • RDSON (@VGS=4.5V) : < 23mΩ
  • High density cell design for extremely low RDSON
  • Excellent on-resistance and DC current capability

CMN4012S9 Description

Applications CMN4012S9 is the N-Channel enhancement mode power  Cellular Handsets and Accessories field effect transistors with high cell density, trench tech-  Personal Digital Assistants nology. This high density process and design have been  Portable Instrumentation optimized switching performance and especially tailored to  Load switch minimize on-state resistance.