Applied Power Microelectronics CMN4012S9
CMN4012S9 is the N-Channel enhancement mode power Cellular Handsets and Accessories field effect transistors with high cell density, trench tech- Personal Digital Assistants nology. This high density process and design have been Portable Instrumentation optimized switching performance and especially tailored to Load switch minimize on-state resistance.DESCRIPTION
APPLICATIONS
CMN4012S9 is the N-Channel enhancement mode power● Cellular Handsets and Accessories field effect transistors with high cell density, trench tech-
● Personal Digital Assistants nology. This high density process and design have been
● Portable Instrumentation optimized switching performance and especially tailored to
● Load switch minimize on-state resistance.
FEATURES
● VDS: 40V● ID: 23.6A
● RDSON (@VGS=10V) : < 15mΩ
● RDSON (@VGS=4.5V) : < 23mΩ
● High density cell design for extremely low RDSON
● Excellent on-resistance and DC current capability Marking Information D N4012S9 XXXX Device Code = N4012S9 Date Code = XXXX G D S Equivalent Circuit and Pin Configuration SOT-89 (Top View) Ordering Information Part Number Packaging CMN4012S9 1000/Tape & Reel Reel Size 7 inch
ABSOLUTE MAXIMUM RATINGS
(TA=25 ℃ unless otherwise noted) Drain-source Voltage Gate-source Voltage Parameter Continuous Drain Current(1)(6) Pulsed Drain Current(3) Total Power Dissipation @ TC=2...