MT9N011 Overview
9Mp CMOS Digital Image Sensor Die.
MT9N011 Key Features
- Die outline, see Figure 5 on page 14
- Singulated die size: 8672µm ±25µm x 8369µm ±25µm
- Bond Pad Identification Tables, see pages 8-13
- CCP2-pliant, sub-low-voltage, differential signaling (sub-LVDS)
- One- or two-lane mobile industry processor interface (MIPI) On-die phase-lock loop (PLL) oscillator Bayer pattern down-s
- Testing
- Standard (level 1) probe
- Optical format: 1/2.3-inch (4:3)
- Active imager size: 6.104mm(H) x 4.578mm(V), 7.630mm diagonal
- Active pixels: 3488H x 2616V