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AQW227N Datasheet Photo Mos Relays

Manufacturer: Aromat

Overview: RF (Radio Frequency) Type [2-Channel (Form A) Type] —Low On resistance— 2. Applicable for 2 Form A use as well as two independent 1 Form A use 3. pact 8-pin DIP size The device es in a pact (W) 6.4×(L) 9.78×(H) 3.9 mm (W) .252×(L) .385×(H) .154 inch , 8-pin DIP size (through hole terminal type). 4. Low capacitance between output terminals ensures high response speed: The capacitance between output terminals is small, typically 10 pF. This enables for a fast operation speed of 200 µs. 5. High sensitivity and low On resistance: Maximum 0.16 A of load current can be controlled with input current of 5 mA (AQW225N). The 10 Ω On resistance is less than our conventional models. With no metallic contacts, the PhotoMOS relay has stable switching characteristics. PhotoMOS RELAYS 6. Low-level off state leakage current: The SSR has an off state leakage current of several milliamperes, whereas the PhotoMOS relay has only 30 pA even with the rated load voltage of 80 V (AQW225N). 7.

Datasheet Details

Part number AQW227N
Manufacturer Aromat
File Size 48.15 KB
Description Photo MOS Relays
Datasheet AQW227N_Aromat.pdf

Key Features

  • extremely low closed-circuit offset voltages to enable control of small analog signals without distortion. 8. Low terminals electromotive force: (approx. 1 µV) 9.78 .385 6.4 .252 3.9±0.2 .154±.008 9.78 .385 6.4 .252 3.6±0.2 .142±.008 mm inch 1 2 3 4 8 7 6 5.

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