Art Chip IRFZ22
0.1 Ohm HEXFET
FEATURES
: Extremely Low RDS(on) Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Parts Per Million Quality RDS(on) 0.10Ω 0.12Ω ID 15A 14A 1 IRFZ20/IRFZ22 HEXFET ® TRANSISTORSABSOLUTE MAXIMUM RATINGS
VDS VDGR ID@TC=25 ID@ Tc=100 IDM VGS PD@ Tc=25 ILM TJ Tstg Parameter Drain-Source Voltage Drain-Gate Voltage (RGS = 20KΩ) Continuous Drain Current Continuous Drain Current Pulsed Drain Current Gate –Source Voltage Max. Power Dissipation Linear Derating Factor Inductive Current, Clamped Operating Junction and Storage Temperature Range Lead Temperature IRFZ20 IRFZ22 50 50 50 50 15 14 10 9.0 60 56 ±20 40 (See Fig. 14) 0.32 (See Fig. 14) (See Fig. 15 and 16) L=100µH 60 56 -56 to 150 300 (0.063 in. (1.6mm) from case for 10s) Units V V A A A V W W/K AELECTRICAL CHARACTERISTICS
@ Tc=25 Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage IGSS Gate-Source Leakage Forward IGSS Gate-Source Leakage Reverse IDSS Zero...