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ATL3A1632H12A - Mobile LPDDR3 SDRAM

General Description

The pin description table below is a comprehensive list of signals for the device family.

All signals listed may not be supported on this device.

See Bond Pad tables for information specific to this device.

Key Features

  • Features.
  • Density: 16Gb.
  • Data rate: 1600Mbps(CLK: 800MHz).
  • 8n prefetch DDR architecture.
  • Array configuration.
  • 512 Meg x 32 (DDP).
  • Interface: HSUL_12.
  • Burst lengths(BL):8.
  • Burst type(BT).
  • Read latency(RL):3,6,8,9,10,11,12 Key Options.
  • Power supply:.
  • VDD1 =1.8V.
  • VDD2 =1.2V.
  • VDDCA=1.2V.
  • VDDQ =1.2V.
  • Array configuration.
  • 512 Meg x 32 (DDP).
  • Packagi.

📥 Download Datasheet

Datasheet Details

Part number ATL3A1632H12A
Manufacturer Artmem
File Size 1.74 MB
Description Mobile LPDDR3 SDRAM
Datasheet download datasheet ATL3A1632H12A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Artmem Technology CO,.Ltd. Mobile LPDDR3 SDRAM ATL3A1632H12A 178-Ball Mobile LPDDR3 SDRAM Features Features • Density: 16Gb • Data rate: 1600Mbps(CLK: 800MHz) • 8n prefetch DDR architecture • Array configuration – 512 Meg x 32 (DDP) • Interface: HSUL_12 • Burst lengths(BL):8 • Burst type(BT) • Read latency(RL):3,6,8,9,10,11,12 Key Options • Power supply: – VDD1 =1.8V – VDD2 =1.2V – VDDCA=1.2V – VDDQ =1.2V • Array configuration – 512 Meg x 32 (DDP) • Packaging – 11mm x 11.5mm x 0.93mm, 178-ball FBGA • Operating temperature range – From -25°C to +85°C (3) – From 0°C to +75°C (default) Part Numbering Information Low Power memory devices are available in different configurations and densities. Table 1: Ordering Information Base Part Number ATL3A1632H12A Capacity Organization Die Num.