ASDM40C23JQ
Features
- 100% EAS Guaranteed
- Green Device Available
- Super Low Gate Charge
- Excellent Cd V/dt effect decline
- Advanced high cell density Trench technology
Application
- Battery protection
- Load switch
- Uninterruptible power supply
40V N&P-Channel MOSFET
Product Summary
- N-Channel
VDS RDS(on).Typ VGS=10V RDS(on).Typ VGS=4.5V ID
40 V 18 mΩ 21 mΩ 21 A
- P-Channel
VDS RDS(on),Typ VGS=-10V RDS(on),Typ VGS=-4.5V ID
-40 V 31 mΩ 41 mΩ -20 A
TO252-4
N-Channel&P-Channel
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Rating
Symbol
Parameter
N-Ch
P-Ch
Drain-Source Voltage
-40
Gate-Source Voltage
±20
±20
ID@TC=25℃ ID@TC=100℃
IDM EAS
IAS PD@TC=25℃
TSTG
Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2 Single Pulse Avalanche...
