Ascend Semiconductor ASDM40C23JQ
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=25A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.| Part No. | ASDM40C23JQ |
|---|---|
| Datasheet | ASDM40C23JQ Download |
| Manufacturer | Ascend Semiconductor |
| Description | 40V N&P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●100% EAS Guaranteed●Green Device Available
●Super Low Gate Charge
●Excellent CdV/dt effect decline
●Advanced high cell density Trench technology Application
●Battery protection
●Load switch
●Uninterruptible power supply ASDM40C23JQ 40V N&P-Channel MOSFET Product Summary
● N-Channel VDS RDS(on).TypVGS=10V RDS(on).TypVGS=4.5V ID 40 V 18 mΩ 21 mΩ 21 A
● P-Channel VDS RDS(on),TypVGS=-10V RDS(on),TypVGS=-4.5V ID -40 V 31 mΩ 41 mΩ -20 A TO252-4 N-Channel&P-Channel
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Rating Symbol Parameter N-Ch P-Ch VDS Drain-Source Voltage 40 -40 VGS Gate-Source Voltage ±20 ±20 ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range 21 17 84 32.1 17.5 21 -55 to 150 -20 -16 -80 38 -26.1 25 -55 to 150 TJ RθJA RθJC Operating Junction Temperature Range Thermal Re...
