Ascend ASDM60DN30Q
60V Dual N-Channel MOSFET
| Part No. | ASDM60DN30Q |
|---|---|
| Datasheet | ASDM60DN30Q Download |
| Manufacturer | Ascend |
| Description | 60V Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Excellent gate charge x RDS(on) product(FOM)● Very low on-resistance RDS(on)
● 150 °C operating temperature
● Pb-free lead plating $SSOLFDWLRQV
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification ASDM60DN30Q 60V Dual N-Channel MOSFET Product Summary VDS RDS(on),typ.@VGS=10V ID 60 V 14 mΩ 30 A DFN5*6-8 Dual N-Channel
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current IDM Maximum Power Dissipation PD Derating factor Single pulse avalanche energy (Note 5) EAS Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) Thermal Resistance,Junction-to-Ambient (Note1) RθJC RθJA Limit 60 ±20 30 23.2 120 40 0.32 135 -55 To 150 3.13 62 Unit V V A A A W W/℃ mJ ℃ ℃/W ℃/W NOV 2021 Version1.0 1/7 0755-86970486 ASDM60DN30Q 60V Dual...
