FEATURES
Power dissipation TRANSISTOR (NPN) TO—92 PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. EMITTER ELECTRICAL CHARACTERISTICS
(Tamb=25℃ Parameter Collector-base breakdown voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE unless otherwise specified) Test Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Bass-emitter saturation voltage Transition frequency W J E E R T C E L VCE (sat) VBE (sat) Ic= 10 mA , IB=0 IE= 100µA, IC=0 IE=0 O conditions Ic= 100µA, IE=0 N IC 3. COLLECTOR C L , . O 1 2 3 D T MIN 50 45 4 TYP MAX UNIT V V V VCB=50 V 0.1 0.1 40 140 0.2 1.5 300 µA µA VEB= 3 V, IC=0 VCE=12.5V, IC=12.5 mA IC= 15mA, IB=1.5 mA V V MHz IC= 15mA, IB=1.5 mA fT VCE=12.5 V, IC=12.5mA f = 100 MHz WEJ ELECTRONIC CO. Http:// E-mail:wej@yongerj...