Atmel AT49BV1604AT
16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
FEATURES
● Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)● Access Time – 70 ns
● Sector Erase Architecture – Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
● Fast Word Program Time – 20 µs
● Fast Sector Erase Time – 300 ms
● Dual-plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A: Eight 4K Word and Seven 32K Word Sectors Memory Plane B: Twenty-four 32K Word Sectors
● Erase Suspend Capability – Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector
● Low-power Operation – 30 mA Active – 10 µA Standby
● Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
● VPP Pin for Accelerated Program/Erase Operations
● RESET Input for Device Initialization
● Sector Lockdown Support
● TSOP and CBGA Package Options
● Top or Bottom Boot Block Configuration Avai