Atmel AT49BV1614
16-Megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
FEATURES
● 2.7V to 3.3V Read/Write● Access Time - 90 ns
● Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout – Two 16K Word (32K Byte) Sectors with Individual Write Lockout
● Fast Word Program Time - 20 µs
● Fast Sector Erase Time - 200 ms
● Dual Plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors Memory Plane B: Twenty-four 32K Word Sectors
● Erase Suspend Capability – Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector
● Low-power Operation – 25 mA Active – 10 µA Standby
● Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
● Optional VPP Pin for Fast Programming
● RESET Input for Device Initialization
● Sector Program Unlock Command
● TSOP, CBGA, and µBGA Package Options
● Top or Bottom Boot Block