Atmel M65609E
The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. The high stability of the 6T cell provides excellent protection against soft errors due to noise. The M65609E is processed according to the methods of the latest revision of the MIL PRF 38535 and ESCC 9000.| Part No. | M65609E |
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| Datasheet | M65609E Download |
| Manufacturer |  Atmel |
| Description | Rad Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM |
| Buy | Stock & Price |
FEATURES
● Operating Voltage: 3.3V● Access Time: 40 ns
● Very Low Power Consumption
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● – Active: 160 mW (Max) – Standby: 70 µW (Typ) Wide Temperature Range: -55°C to +125°C MFP 32 leads 400 Mils Width Package TTL Compatible Inputs and Outputs Asynchronous Designed on 0.35µm Process No Single Event Latch-up below a LET threshold of 80 MeV/mg/cm2 Tested up to a Total Dose of 200 Krad (Si) according to MIL STD 883 Method 1019 Quality grades: QML Q or V with SMD 5962-02501
DESCRIPTION
Utilizing an array of six transistors (6T) memory cells, the M65609E combines an extremely low standby supply current with a fast access time at 40 ns. It is produced on the same process as the MH1RT sea of gates series. Rad Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM M65609E Rev. 4158I–AERO–07/07 1 M65609E Block Diagram Pin Configuration 32 pins Flatpack 400 MILS PinDESCRIPTION
Name A0 - A16 I/O1 - I/O8 CS1 CS2 WE OE VCC GNDDESCRIPTION
Address Inputs Data Input/Output Chip Select 1 Chip Select 2 Write Enable Output Enable Power Ground 2 4158I–AERO–07/07 Table 1.
