FEATURES
Access speed: 120, 150, 200, and 250ns Data Retention: 100 Years z Low power, active current: 50mA, standby current: 500uA z Single +5V (+10%) power supply z Data Polling and Toggle z Erase/Write Endurance (10,000 byte mode / 100,000 page mode) z Software Data protection Algorithm z Automatic , Self-Timed Byte Write z Automatic Programming: Automatic Page Write: 10ms (MAX) z z OPTIONS z MARKINGS -12 -15 -20 -25 F CW XT IT 883C Timing 120ns access 150ns access 200ns access 250ns access z Packages Ceramic Flat Pack CerDIP, 600 mil z Operating Temperature Ranges -Military (-55oC to +125oC) -Industrial (-40oC to +85oC) -Full Military Class M Processing *NOTE: Package lid is connected to ground (Vss). GENERAL DESCRIPTION
The Austin Semiconductor, Inc. This device has a 256-Byte Page Programming function to make its erase and write operations faster. The AS28C010 features Data Polling and a toggle signal to indicate completion of erase and programming operations. This EEPROM provides several levels of data protection., in AS28C010 Rev.