AS28C010 Datasheet | Austin Semiconductor

EEPROM Austin Semiconductor, Inc. 128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-38267 z MIL-PRF-38535 z PIN ASSIGNMENT (Top View) 32-Pin CFP (F), 32-Pin Cer DIP (CW) NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Vcc WE NC A14 A13 A8 A9 A11 OE A10 CE I/O 7 I/O 6 I/O 5 I/O 4 I/O 3 Features Access speed: 120, 150, 200, and 250ns Data Retention: 100 Years z Low power, active current: 50m A, standby current: 500u A z Single +5V (+10%) power supply z Data Polling and Toggle z Erase/Write Endurance (10,000 byte mode / 100,000 page mode) z Software Data protection Algorithm z Automatic , Self-Timed Byte Write z Automatic Programming: Automatic Page Write: 10ms (MAX) z z OPTIONS z MARKINGS -12 -15 -20 -25 F CW XT IT 883C Timing 120ns access 150ns access 200ns access 250ns access z Packages Ceramic Flat Pack Cer DIP, 600 mil .. z Operating Temperature Ranges -Military (-55o C to +125o C) -Industrial (-40o C to +85o C) -Full Military Class M Processing - NOTE: Package lid is connected to ground (Vss). GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS28C010 is capable of in system electrical Byte and Page reprogrammability. The AS28C010 achieves high speed access, low power consumption, and a high level of reliability by employing advanced CMOS process and circuitry technology. This device has a 256-Byte Page Programming function to make its erase and write operations faster. The AS28C010 Features Data Polling and a toggle signal to indicate pletion of erase and programming operations. This EEPROM provides several levels of data protection., in AS28C010 Rev. 1.5 5/06 addition to noise protection on the WE signal and write inhibit during power on and off. Software data...