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AS28F128J3M - Plastic Encapsulated Microcircuit 128Mb

General Description

ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically blockerasable (FLASH), programmable memory device manufactured using Micron’s 0.15um process technology.

Key Features

  • 100% Pin and Function compatible to Intel’s MLC Family NOR Cell Architecture 2.7V to 3.6V VCC 2.7V to 3.6V or 5V VPEN (Programming Voltage) Asynchronous Page Mode Reads Manufacturer’s ID Code: ! MT28F128J3MRG Micron 0x2Ch.
  • Industry Standard Pin-Out.
  • Fully compatible TTL Input and Outputs.
  • Common Flash Interface [CFI].
  • Scalable Command Set.
  • Automatic WRITE and ERASE Algorithms.
  • 5.6us per Byte effective programming time.
  • 128 bit protec.

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Datasheet Details

Part number AS28F128J3M
Manufacturer Austin Semiconductor
File Size 147.77 KB
Description Plastic Encapsulated Microcircuit 128Mb
Datasheet download datasheet AS28F128J3M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PEM Austin Semiconductor, Inc. AS28F128J3M Q-Flash Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture Features 100% Pin and Function compatible to Intel’s MLC Family NOR Cell Architecture 2.7V to 3.6V VCC 2.7V to 3.6V or 5V VPEN (Programming Voltage) Asynchronous Page Mode Reads Manufacturer’s ID Code: ! MT28F128J3MRG Micron 0x2Ch • Industry Standard Pin-Out • Fully compatible TTL Input and Outputs • Common Flash Interface [CFI] • Scalable Command Set • Automatic WRITE and ERASE Algorithms • 5.