• Part: AS4SD16M16
  • Description: 16 Meg x 16 SDRAM Synchronous DRAM Memory
  • Manufacturer: Austin Semiconductor
  • Size: 1.07 MB
Download AS4SD16M16 Datasheet PDF
Austin Semiconductor
AS4SD16M16
AS4SD16M16 is 16 Meg x 16 SDRAM Synchronous DRAM Memory manufactured by Austin Semiconductor.
FEATURES - Full Military temp (-55°C to 125°C) processing available - Configuration: 16 Meg x 16 (4 Meg x 16 x 4 banks) - Fully synchronous; all signals registered on positive edge of system clock - Internal pipelined operation; column address can be changed every clock cycle - Internal banks for hiding row access/precharge - Programmable burst lengths: 1, 2, 4, 8 or full page - Auto Precharge, includes CONCURRENT AUTO PRECHARGE and Auto Refresh Modes - Self Refresh Mode (IT) - 64ms, 8,192-cycle refresh (IT) - <24ms 8,192 cycle recfresh (XT) - WRITE Recovery (t WR = “2 CLK”) - LVTTL-patible inputs and outputs .. - Single +3.3V ±0.3V power supply PIN ASSIGNMENT (Top View) 54-Pin TSOP OPTIONS - Plastic Package - OCPL- 54-pin TSOP (400 mil) Timing (Cycle Time) 7.5ns @ CL = 3 (PC133) or 7.5ns @ CL = 2 (PC100) MARKING DG No. 901 - -75 - Operating Temperature Ranges -Industrial Temp (-40°C to 85° C) IT -Industrial Plus Temp (-45°C to +105°C) IT+ -Military Temp (-55°C to 125°C) XT- - - 16 Meg x 16 Configuration 4 Meg x 16 x 4 banks Refresh Count 8K Row Addressing 8K (A0-A12) Bank Addressing 4 (BA0, BA1) Column Addressing 512 (A0-A8) Note: “” indicates an active low. KEY TIMING PARAMETERS SPEED CLOCK ACCESS TIME GRADE FREQUENCY CL = 2- - CL = 3- - -75 133 MHz - 5.4ns -75 100 MHz 6ns - - Off-center parting line - - CL = CAS (READ) latency - - - Consult Factory SETUP TIME 1.5ns 1.5ns HOLD TIME 0.8ns 0.8ns For more products and information please visit our web site at .austinsemiconductor. AS4SD16M16 Rev. 1.0 11/02 Austin Semiconductor, Inc. reserves the right to change products or specifications without...