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AS4SD16M16 - 16 Meg x 16 SDRAM Synchronous DRAM Memory

Description

The 256MB SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits.

It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

Features

  • Full Military temp (-55°C to 125°C) processing available.
  • Configuration: 16 Meg x 16 (4 Meg x 16 x 4 banks).
  • Fully synchronous; all signals registered on positive edge of system clock.
  • Internal pipelined operation; column address can be changed every clock cycle.
  • Internal banks for hiding row access/precharge.
  • Programmable burst lengths: 1, 2, 4, 8 or full page.
  • Auto Precharge, includes.

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Datasheet preview – AS4SD16M16

Datasheet Details

Part number AS4SD16M16
Manufacturer Austin Semiconductor
File Size 1.07 MB
Description 16 Meg x 16 SDRAM Synchronous DRAM Memory
Datasheet download datasheet AS4SD16M16 Datasheet
Additional preview pages of the AS4SD16M16 datasheet.

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Full PDF Text Transcription

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SDRAM Austin Semiconductor, Inc. 256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 16 Meg x 16 (4 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8 or full page • Auto Precharge, includes CONCURRENT AUTO PRECHARGE and Auto Refresh Modes • Self Refresh Mode (IT) • 64ms, 8,192-cycle refresh (IT) • <24ms 8,192 cycle recfresh (XT) • WRITE Recovery (tWR = “2 CLK”) • LVTTL-compatible inputs and outputs www.DataSheet4U.com • Single +3.3V ±0.
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