AS4SD16M16
AS4SD16M16 is 16 Meg x 16 SDRAM Synchronous DRAM Memory manufactured by Austin Semiconductor.
FEATURES
- Full Military temp (-55°C to 125°C) processing available
- Configuration: 16 Meg x 16 (4 Meg x 16 x 4 banks)
- Fully synchronous; all signals registered on positive edge of system clock
- Internal pipelined operation; column address can be changed every clock cycle
- Internal banks for hiding row access/precharge
- Programmable burst lengths: 1, 2, 4, 8 or full page
- Auto Precharge, includes CONCURRENT AUTO PRECHARGE and Auto Refresh Modes
- Self Refresh Mode (IT)
- 64ms, 8,192-cycle refresh (IT)
- <24ms 8,192 cycle recfresh (XT)
- WRITE Recovery (t WR = “2 CLK”)
- LVTTL-patible inputs and outputs ..
- Single +3.3V ±0.3V power supply
PIN ASSIGNMENT (Top View)
54-Pin TSOP
OPTIONS
- Plastic Package
- OCPL- 54-pin TSOP (400 mil) Timing (Cycle Time) 7.5ns @ CL = 3 (PC133) or 7.5ns @ CL = 2 (PC100)
MARKING
DG No. 901
- -75
- Operating Temperature Ranges -Industrial Temp (-40°C to 85° C) IT -Industrial Plus Temp (-45°C to +105°C) IT+ -Military Temp (-55°C to 125°C) XT-
- -
16 Meg x 16 Configuration 4 Meg x 16 x 4 banks Refresh Count 8K Row Addressing 8K (A0-A12) Bank Addressing 4 (BA0, BA1) Column Addressing 512 (A0-A8)
Note: “” indicates an active low.
KEY TIMING PARAMETERS
SPEED CLOCK ACCESS TIME GRADE FREQUENCY CL = 2-
- CL = 3-
- -75 133 MHz
- 5.4ns -75 100 MHz 6ns
- - Off-center parting line
- - CL = CAS (READ) latency
- -
- Consult Factory
SETUP TIME 1.5ns 1.5ns
HOLD TIME 0.8ns 0.8ns
For more products and information please visit our web site at .austinsemiconductor.
AS4SD16M16 Rev. 1.0 11/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without...