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AS5C2568 - 32K x 8 SRAM SRAM MEMORY ARRAY

General Description

The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs using a four-transistor memory cell.

These SRAMs are fabricated using double-layer metal, double-layer polysilicon technology.

Key Features

  • Access Times: 12, 15, & 20ns Fast output enable (tDOE) for cache.

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Datasheet Details

Part number AS5C2568
Manufacturer Austin Semiconductor
File Size 162.37 KB
Description 32K x 8 SRAM SRAM MEMORY ARRAY
Datasheet download datasheet AS5C2568 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SRAM Austin Semiconductor, Inc. 32K x 8 SRAM SRAM MEMORY ARRAY FEATURES • • • • • • • • • Access Times: 12, 15, & 20ns Fast output enable (tDOE) for cache applications Low active power: 400 mW (TYP) Low power standby Fully static operation, no clock or refresh required High-performance, low-power CMOS double-metal process Single +5V (+10%) Power Supply Easy memory expansion with CE All inputs and outputs are TTL compatible AS5C2568 PIN ASSIGNMENT (Top View) 28-PIN PSOJ (DJ) OPTIONS • Timing 12ns access* 15ns access 20ns access • Package(s)** Plastic SOJ MARKING -12 -15 -20 www.DataSheet4U.com A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 VCC 27 WE 26 A13 25 A8 24 A9 23 A11 22 OE 21 A10 20 CE 19 I/O7 18 I/O6 17 I/O5 16 I/O4 15 I/O3 DJ No.