Datasheet Summary
SRAM
Austin Semiconductor, Inc. 32K x 8 SRAM
SRAM MEMORY ARRAY
Features
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- Access Times: 12, 15, & 20ns Fast output enable (tDOE) for cache applications Low active power: 400 mW (TYP) Low power standby Fully static operation, no clock or refresh required High-performance, low-power CMOS double-metal process Single +5V (+10%) Power Supply Easy memory expansion with CE All inputs and outputs are TTL patible
PIN ASSIGNMENT (Top View)
28-PIN PSOJ (DJ)
OPTIONS
- Timing 12ns access- 15ns access 20ns access
- Package(s)-
- Plastic SOJ
MARKING
-12 -15 -20
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A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 VCC...
