AS5C512K8 Datasheet | Austin Semiconductor

FEATURES - Ultra High Speed Asynchronous Operation - Fully Static, No Clocks - Multiple center power and ground pins for improved noise immunity - Easy memory expansion with CE and OE options - All inputs and outputs are TTL-patible - Single +5V Power Supply +/- 10% - Data Retention Functionality Testing (Contact Factory) - Cost Efficient Plastic Packaging - Extended Testing Over -55ºC to +125ºC for plastics - Plastic 36 pin PSOJ is fully patible with the .. Ceramic 36 pin SOJ - 3.3V Future Offering 36-Pin Flat Pack (F) OPTIONS - Timing 15ns access 17ns access 20ns access 25ns access 35ns access 45ns access - Operating Temperature Ranges Military (-55o C to +125o C) Industrial (-40o C to +85o C) - Package(s) Ceramic LCC Ceramic Flatpack Plastic SOJ Ceramic SOJ - 2V data retention/low power - Radiation Tolerant (EPI) MARKING -15 -17 -20 -25 -35 -45 GENERAL DESCRIPTION XT IT The AS5C512K8 is a high speed SRAM. It offers flexibility in high-speed memory applications, with chip enable (CE) and output enable (OE) capabilities. These features can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is acplished when write enable (WE) and CE inputs are both LOW. Reading is acplished when WE remains HIGH and CE and OE go LOW. As a option, the device can be supplied offering a reduced power standby mode, allowing system designers to meet low standby power requirements. This device operates from a single +5V power supply and all inputs and outputs are fully TTL-patible. The AS5C512K8DJ offers the convenience and reliability of the AS5C512K8 SRAM and has the cost advantage of a durable plastic. The AS5C512K8DJ is footprint patible with 36 pin CSOJ package of the SMD 5692-95600. EC F DJ ECJ No. 210 No. 307 No. 903 No.503 L (Consult Factory) E For more products and information please visit our web site at .austinsemiconductor. AS5C512K8 Rev. 4.5 7/01 Austin Semiconductor, Inc. reserves the right to change products or...