Austin Semiconductor AS5LC512K8
The AS5LC512K8 is a 3.3V high speed SRAM. It offers flexibility in high-speed memory applications, with chip enable (CE\) and output enable (OE\) capabilities. These features can place the outputs in High-Z for additional flexibility in system design.| Part No. | AS5LC512K8 |
|---|---|
| Datasheet | AS5LC512K8 Download |
| Manufacturer |  Austin Semiconductor |
| Description | 512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM |
| Buy | Stock & Price |
FEATURES
● Ultra High Speed Asynchronous Operation● Fully Static, No Clocks
● Multiple center power and ground pins for improved noise immunity
● Easy memory expansion with CE\ and OE\ options
● All inputs and outputs are TTL-compatible
● Single +3.3V Power Supply +/- 0.3%
● Data Retention Functionality Testing
● Cost Efficient Plastic Packaging
● Extended Testing Over -55ºC to +125ºC for plastics 36-Pin Flat Pack (F) OPTIONS
● Timing 12ns access 15ns access 20ns access
● Operating Temperature Ranges Military (-55oC to +125oC) Industrial (-40oC to +85oC)
● Package(s) Ceramic Flatpack Plastic SOJ (400 mils wide) Ceramic LCC
● 2V data retention/low power MARKING -12 -15 -20 XT IT F DJ EC L No. 307 No. 210
GENERAL DESCRIPTION
The AS5LC512K8 is a 3.3V high speed SRAM. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW. As a option, the device can be supplied offering a reduced power standby mode, allowing system designers to meet low standby power requirements.
