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AS5SP256K36DQ - Plastic Encapsulated Microcircuit 9.0Mb

General Description

ASI’s AS5SP256K36DQ is a 9.0Mb High Performance Synchronous Pipeline Burst SRAM, available in multiple temperature screening levels, fabricated using High Performance CMOS technology and is organized as a 256K x 36.

Key Features

  • Synchronous Operation in relation to the input Clock DQc DQc.
  • 2 Stage Registers resulting in Pipeline operation DQc DQc.
  • On chip address counter (base +3) for Burst operations VSSQ VDDQ.
  • Self-Timed Write Cycles DQc DQc.
  • On-Chip Address and Control Registers NC VDD SSRAM [SPB].
  • Byte Write support NC VSS.
  • Global Write support DQd DQd.
  • On-Chip low power mode [powerdown] via ZZ pin VDDQ VSSQ.
  • Interleaved or Linear Burs.

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Datasheet Details

Part number AS5SP256K36DQ
Manufacturer Austin Semiconductor
File Size 399.70 KB
Description Plastic Encapsulated Microcircuit 9.0Mb
Datasheet download datasheet AS5SP256K36DQ Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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98 97 96 95 92 91 89 87 84 99 94 93 90 88 86 85 83 DQPc DQc DQc VDDQ VSSQ 100 82 81 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 1 2 3 4 5 6 7 8 9 A A CE1 CE2 BWd BWc BWb BWa CE3 VDD VSS CLK GW BWE OE ADSC ADSP ADV A A Austin Semiconductor, Inc.