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AS5SS128K36 - 128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT

General Description

The Austin Semiconductor, Inc.

Zero Bus Latency SRAM family employs high-speed, low-power CMOS designs using an advanced CMOS process.

ASI’s 4Mb ZBL SRAMs integrate a 128K x 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter.

Key Features

  • High frequency and 100% bus utilization.
  • Fast cycle times: 11ns & 12ns.
  • Single +3.3V +5% power supply (VDD).
  • Advanced control logic for minimum control signal interface.
  • Individual BYTE WRITE controls may be tied LOW.
  • Single R/W (READ/WRITE) control pin.
  • CKE pin to enable clock and suspend operations.
  • Three chip enables for simple depth expansion.
  • Clock-controlled and registered addresses, data I/Os and control sig.

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Datasheet Details

Part number AS5SS128K36
Manufacturer Austin Semiconductor
File Size 169.43 KB
Description 128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT
Datasheet download datasheet AS5SS128K36 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SRAM Austin Semiconductor, Inc. 128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT FEATURES • High frequency and 100% bus utilization • Fast cycle times: 11ns & 12ns • Single +3.3V +5% power supply (VDD) • Advanced control logic for minimum control signal interface • Individual BYTE WRITE controls may be tied LOW • Single R/W (READ/WRITE) control pin • CKE pin to enable clock and suspend operations • Three chip enables for simple depth expansion • Clock-controlled and registered addresses, data I/Os and control signals • Internally self-timed, fully coherent WRITE • Internally self-timed, registered outputs to eliminate the need to control OE • SNOOZE MODE for reduced-power standby • Common data inputs and data outputs • Linear or Interleaved Burst Modes www.DataSheet4U.