AS5SS256K18 Description
The Austin Semiconductor, Inc. Synchronous Burst SRAM family employs high-speed, low power CMOS designs that are fabricated using an advanced CMOS process. ASI’s 4Mb Synchronous Burst SRAMs integrate a 256K x 18, SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter.
AS5SS256K18 Key Features
- Fast access times: 8, 10, and 15ns
- Fast clock speed: 113, 100, and 66 MHz
- Fast clock and OE access times
- Single +3.3V +0.3V/-0.165V power supply (VDD)
- SNOOZE MODE for reduced-power standby
- mon data inputs and data outputs
- Individual BYTE WRTIE control and GLOBAL WRITE
- Three chip enables for simple depth expansion and address pipelining
- Clock-controlled and registered addresses, data I/Os and control signals
- Interally self-timed WRITE cycle