AS8F128K32 Datasheet | Austin Semiconductor

FLASH Austin Semiconductor, Inc. 128K x 32 FLASH FLASH MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS - - - - - - - - - - - - - - .. PIN ASSIGNMENT (Top View) 68 Lead CQFP (Q & Q1) NC A0 A1 A2 A3 A4 A5 CS3 GND CS4 WE1 A6 A7 A8 A9 A10 Vcc SMD 5962-94716 MIL-STD-883 Fast Access Times: 60, 70, 90, 120 and 150ns Operation with single 5V (±10%) patible with JEDEC EEPROM mand set Any bination of Sectors can be Erased Supports Full Chip Erase Embedded Erase and Program Algorithms TTL patible Inputs and CMOS Outputs Hardware Data Protection Data Polling and Toggle Bits Low Power consumption Individual Byte Read/ Write Control 10,000 Program/Erase Cycles Features I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 GND I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 Vcc A11 A12 A13 A14 A15 A16 CS1 OE CS2 NC WE2 WE3 WE4 NC NC NC I/O 16 I/O 17 I/O 18 I/O 19 I/O 20 I/O 21 I/O 22 I/O 23 GND I/O 24 I/O 25 I/O 26 I/O 27 I/O 28 I/O 29 I/O 30 I/O 31 OPTIONS - Timing 60ns 70ns 90ns 120ns 150ns Package Ceramic Quad Flat pack Ceramic Quad Flat pack Q Q1 MARKINGS -60 -70 -90 -120 -150 No. 703 - GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS8F128K32 is a 4 Megabit CMOS FLASH Memory Module organized as 128K x 32 bits. The AS8F128K32 achieves high speed access (60 to 150 ns), low power consumption and high reliability by employing advanced CMOS memory technology. The device is designed to be programmed in-system with the standard system 5.0V VCC supply. A 12.0V VPP is not required for program or erase operation. The device can also be programmed or erased in standard EPROM programmers. To eliminate bus contention the device has seperate chip enbaled (CEx), write enable (WEx) and output enable (OE) controls. The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely mand set...