AS8NVC512K32 Datasheet | Austin Semiconductor

AUSTIN SEMICONDUCTOR, INC. ADVANCE INFORMATION Austin Semiconductor, Inc. 512K x 32 Module nv SRAM 5.0V High Speed SRAM with Non-Volatile Storage Features - -55o C to 125o C Operation - True non-volatile SRAM (no batteries) - 20 ns, 25 ns, and 45 ns access times - Automatic STORE on power down with only a small - - - - - - - capacitor STORE to Quantum Trap® nonvolatile elements initiated by software, device pin, or Auto Store® on power down RECALL to SRAM initiated by software or power up Infinite Read, Write, and Recall cycles 200,000 STORE cycles to Quantum Trap 20 year data retention Single 5.0V ±10% power supply Ceramic Hermetic 68 Quad Flatpak -Can order with X7R CAPS on package -Matches patible pinout footprint of SRAM & EEPROM Module AS8nv C512K32 nv SRAM AVAILABLE AS MILITARY SPECIFICATIONS - Military Processing (MIL-STD-883C para 1.2.2) - Temperature Range -55C to 125C FUNCTIONAL DESCRIPTION The Austin Semiconductor AS8nv C512K32 is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K bytes of 8 bits for each of 4 die to form 512Kx32. The embedded nonvolatile elements incorporate Quantum Trap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable Quantum Trap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control. LOGIC BLOCK DIAGRAM m[1, 2, 3] $ $ $ $ $ $ $ $ $ $ $ '4 '4 '4 '4 '4 '4 '4 , 1 3 8 7 % 8 ) ) ( 5 6 5 2 : ' ( & 2 ' ( 5 4XDWUXP7UDS ; 9&& 9&$3 4x 4x 67$7,&5$0 $55$< ; 6725( 5(&$// 32:(5 &21752/ 6725(5(&$// &21752/ +6% .. 62)7:$5(...