AS8SF384K32 Datasheet | Austin Semiconductor

Austin Semiconductor, Inc. AS8SF384K32 128K x 16 SRAM & PIN ASSIGNMENT (Top View) 512K x 16 FLASH SRAM / FLASH MEMORY ARRAY Features - Operation with single 5V supply - High speed: 35ns SRAM, 90ns FLASH - Built in decoupling caps and multiple ground pins for low noise - Organized as 128K x 16 SRAM and 512K x 16 FLASH - Low power CMOS - TTL patible Inputs and Outputs - Both blocks of memory are user configurable as 256K x 8 NC A0 A1 A2 A3 A4 A5 FCS1 GND FCS2 SWE1 A6 A7 A8 A9 A10 VCC SRAM & FLASH Mixed Module 68 Lead CQFP (QT) FLASH MEMORY Features - - - - - - - Operation with single 5V (±10%) Eight equal sectors of 64K bytes Any bination of sectors can be concurrently erased Supports full chip erase Embedded erase and program algorithms 20,000 program/erase cycles Hardware write protection SI/O 0 SI/O 1 SI/O 2 SI/O 3 SI/O 4 SI/O 5 SI/O 6 SI/O 7 GND SI/O 8 SI/O 9 SI/O 10 SI/O 11 SI/O 12 SI/O 13 SI/O 14 SI/O 15 NC NC A18 FWE2 FWE1 SWE2 A17 SCS2 OE SCS1 A16 A15 A14 A13 A12 A11 VCC FI/O 0 FI/O 1 FI/O 2 FI/O 3 FI/O 4 FI/O 5 FI/O 6 FI/O 7 GND FI/O 8 FI/O 9 FI/O 10 FI/O 11 FI/O 12 FI/O 13 FI/O 14 FI/O 15 OPTIONS MARKINGS XT IT PIN A 0-18 PIN DESCRIPTION FUNCTION Address Inputs SRAM Data Input / Outputs FLASH Data Input / Outputs Output Enable SRAM Write Enables FLASH Write Enables SRAM Chip Selects FLASH Chip Selects Power Supply Ground No Connect - Operating Temperature Ranges Military (-55o C to +125o C) Industrial (-40o C to +85o C) - Timing SRAM 35ns SI/O 0-15 FI/O 0-15 OE SWE 1-2...