MT42C4256 Overview
Address Inputs Column Enable DRAM Data In-Out/Write-Mask Bit Serial Enable Row Enable Serial Data Clock Serial Data In-Out Transfer Register/Q Output Enable Write-Mask Select/Write Enable Special Function Select Split-Register Activity Status 5V Supply Ground Ground (Important: Not Connected to internal Vss, Pin should be left open or tied to ground. SMJ44C251B/MT42C4256 Rev.
MT42C4256 Key Features
- Class B High-Reliability Processing
- DRAM: 262144 Words × 4 Bits SAM: 512 Words × 4 Bits
- Single 5-V Power Supply (±10% Tolerance)
- Dual Port Accessibility-Simultaneous and Asynchronous Access From the DRAM and SAM Ports
- Bidirectional-Data-Transfer Function Between the DRAM and the Serial-Data Register
- 4 × 4 Block-Write Feature for Fast Area Fill Operations; As Many as Four Memory Address Locations Written per Cycle From
- Write-Per-Bit Feature for Selective Write to Each RAM I/O; Two Write-Per-Bit Modes to Simplify System Design
- Enhanced Page-Mode Operation for Faster Access
- CAS-Before-RAS (CBR) and Hidden Refresh Modes
- All Inputs/Outputs and Clocks Are TTL patible
