Datasheet4U.com

MT4C4001J - 1 MEG x 4 DRAM Fast Page Mode DRAM

Product Overview

Austin Semiconductor

📥 Download Datasheet

MT4C4001J 1 MEG x 4 DRAM Fast Page Mode DRAM by Austin Semiconductor - Datasheet Preview — Datasheet preview – MT4C4001J

Datasheet Details

Part number	MT4C4001J
Manufacturer	Austin Semiconductor
File Size	276.87 KB
Description	1 MEG x 4 DRAM Fast Page Mode DRAM
Datasheet	MT4C4001J Datasheet
Additional preview pages of the MT4C4001J datasheet.

Product details

Description

The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration.

During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time.

Features

Industry standard x4 pinout, timing, functions, and packages.
High-performance, CMOS silicon-gate process.
Single +5V±10% power supply.
Low-power, 2.5mW standby; 300mW active, typical.
All inputs, outputs, and clocks are fully TTL and CMOS compatible.
1,024-cycle refresh distributed across 16ms.
Refresh modes: RAS-ONLY, CAS-BEFORE-RAS (CBR), and HIDDEN.
FAST PAGE MODE access cycle.
CBR with WE a HIGH (JEDEC test mo.

📁 Similar Datasheet

MT4C4001J - 1 MEG x 4 DRAM (Micross)
MT4C4001 - standard or self refresh (Micron Technology)
MT4C40004 - 4M x 4 DRAM (Micron Technology)
MT4C40005 - 4M x 4 DRAM (Micron Technology)
MT4C4003J - 1M x 4 DRAM (Micron Technology)
MT4C4004 - 1M x 4 DRAM (Micron Technology)
MT4C4004J - 1M x 4 DRAM (Micron Technology)
MT4C4005 - 1M x 4 DRAM (Micron Technology)
MT4C4007J - 1M x 4 DRAM (Micron Technology)
MT4C4256 - 256K x 4 DRAM (Micron Technology)

Other Datasheets by Austin Semiconductor

MT4C4256 - 256K x 4 DRAM
MT4C1004J883C - 4 MEG x 1 DRAM FAST PAGE MODE
MT42C4256 - 256K X 4 VRAM 256K x 4 DRAM

Published: Jun 7, 2007 |