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MT4C4001J - 1 MEG x 4 DRAM Fast Page Mode DRAM

General Description

The MT4C4001J is a randomly accessed solid-state memory containing 4,194,304 bits organized in a x4 configuration.

During READ or WRITE cycles each bit is uniquely addressed through the 20 address bits which are entered 10 bits (A0-A9) at a time.

Key Features

  • Industry standard x4 pinout, timing, functions, and packages.
  • High-performance, CMOS silicon-gate process.
  • Single +5V±10% power supply.
  • Low-power, 2.5mW standby; 300mW active, typical.
  • All inputs, outputs, and clocks are fully TTL and CMOS compatible.
  • 1,024-cycle refresh distributed across 16ms.
  • Refresh modes: RAS-ONLY, CAS-BEFORE-RAS (CBR), and HIDDEN.
  • FAST PAGE MODE access cycle.
  • CBR with WE a HIGH (JEDEC test mo.

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Datasheet Details

Part number MT4C4001J
Manufacturer Austin Semiconductor
File Size 276.87 KB
Description 1 MEG x 4 DRAM Fast Page Mode DRAM
Datasheet download datasheet MT4C4001J Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DRAM Austin Semiconductor, Inc. 1 MEG x 4 DRAM Fast Page Mode DRAM AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 DQ1 DQ2 WE RAS A9 A0 A1 A2 A3 Vcc 1 2 3 4 5 6 7 8 9 10 20-Pin DIP (C, CN) MT4C4001J PIN ASSIGNMENT (Top View) 20 19 18 17 16 15 14 13 12 11 Vss DQ4 DQ3 CAS OE A8 A7 A6 A5 A4 20-Pin SOJ (ECJ), 20-Pin LCC (ECN), & 20-Pin Gull Wing (ECG) DQ1 DQ2 WE RAS A9 1 2 3 4 5 26 25 24 23 22 Vss DQ4 DQ3 CAS OE FEATURES • Industry standard x4 pinout, timing, functions, and packages • High-performance, CMOS silicon-gate process • Single +5V±10% power supply • Low-power, 2.