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MT5C2561 - SRAM MEMORY ARRAY

General Description

The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology.

For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE) on all organizations.

Key Features

  • High Speed: 35, 45, 55, and 70 Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process.
  • Single +5V (+10%) Power Supply.
  • Easy memory expansion with CE.
  • All inputs and outputs are TTL compatible 28-Pin LCC (EC) www. DataSheet4U. com.
  • Timing 35ns access 45ns access 55ns access 70ns access.
  • Package(s) Ceramic DIP (300 mil) Ceramic LCC -35 -45 -55.
  • -70.
  • A8.

📥 Download Datasheet

Datasheet Details

Part number MT5C2561
Manufacturer Austin Semiconductor
File Size 120.36 KB
Description SRAM MEMORY ARRAY
Datasheet download datasheet MT5C2561 Datasheet

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Other Datasheets by Austin Semiconductor

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MT5C2568 32K x 8 SRAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SRAM Austin Semiconductor, Inc. 256K x 1 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88725 • SMD 5962-88544 • MIL-STD-883 MT5C2561 PIN ASSIGNMENT (Top View) 24-Pin DIP (C) (300 MIL) A6 A7 A8 A9 A10 A11 A14 A15 A0 Q WE Vss 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 Vcc A5 A4 A3 A2 A1 A17 A16 A13 A12 D CE FEATURES • • • • High Speed: 35, 45, 55, and 70 Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process • Single +5V (+10%) Power Supply • Easy memory expansion with CE • All inputs and outputs are TTL compatible 28-Pin LCC (EC) www.DataSheet4U.