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MT5C2561 Datasheet PDF

Austin Semiconductor MT5C2561

The Austin Semiconductor SRAM family employs high-speed, low-power CMOS and are fabricated using doublelayer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE\) on all organizations.
Part No. MT5C2561
Datasheet MT5C2561 Download
Manufacturer
Austin Semiconductor
Description SRAM MEMORY ARRAY
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MT5C2561 datasheet page 1 preview

FEATURES

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● High Speed: 35, 45, 55, and 70 Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process
● Single +5V (+10%) Power Supply
● Easy memory expansion with CE\
● All inputs and outputs are TTL compatible 28-Pin LCC (EC)
● Timing 35ns access 45ns access 55ns access 70ns access
● Package(s) Ceramic DIP (300 mil) Ceramic LCC -35 -45 -55* -70* A8 A7 A6 Vcc A17 3 2 1 28 27 NC 4 A9 5 A10 6 A11 7 A14 8 A15 9 A0 10 Q 11 NC 12 13 14 15 16 17 A12 D CE\ Vss WE\ 26 25 24 23 22 21 20 19 18 NC A4 A3 A2 A1 A17 A16 A13 NC OPTIONS MARKING C EC No. 106 No. 204
● Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT
● 2V data retention/low power L

GENERAL DESCRIPTION

This enhancement can place the outputs in High-Z for additional flexibility in system design. The x1 configuration features separate data input and output. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW.
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