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ABA-54563 Datasheet PDF

Avago Technologies ABA-54563

the ABA-54563 offers good linearity performance with a typical OIP3 of 35 dBm at 200 MHz. ABA-54563 is fabricated using Avago’s HP25 silicon bipolar process, which employs a double-diffused single polysilicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO).
Part No. ABA-54563
Datasheet ABA-54563 Download
Manufacturer
Avago Technologies
Description 3.4 GHz Broadband Silicon RFIC Amplifier
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ABA-54563 datasheet page 1 preview

DESCRIPTION

Avago’sABA-54563isaneconomical,easy-to-use­internally 50-ohm matched silicon monolithic amplifier that offers excellent gain and broadband response from DC to 3.4 GHz. Packaged in an ultraminiature industry-standard SOT-363 package, it requires half the board space of a SOT-143 package. At2GHz,theABA-54563offersasmall-signalgainof 23 dB, output P1dB of 16.1 dB and 27.8 dBm output third order intercept point. It is suitable for use as buffer ­amplifiers for wideband applications. They are designed for low cost gain blocks in cellular applications, DBS ­tuners, LNB and other wireless communications systems. At IF frequencies, ABA-54563 is fabricated using Avago’s HP25 silicon bipolar process, which employs a double-diffused single polysilicon process with self-aligned submicron emitter ­geometry. The process is capable of simultaneous high fT and high NPN ­breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and ­submicron aluminum multilayer interconnect to achieve ­superior ­performance, high uniformity and proven r­ eliability.
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