Avago Technologies ATF-36077
the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performance to variations in input imped ance match, making the design of broadband low noise ampli fiers much easier. The premium sensitivity of the ATF-36077 makes this device the ideal choice for use in the first stage of extremely low noise cascades. The repeatable performance and consistency make it appropriate for use in Ku-band Direct Broad-cast Satellite (DBS) Television systems, C-band Television Receive Only (TVRO) LNAs, or other low noise amplifiers operating in the 2‑18 GHz frequency range.| Part No. | ATF-36077 |
|---|---|
| Datasheet | ATF-36077 Download |
| Manufacturer |  Avago Technologies |
| Description | Ultra Low Noise Pseudomorphic HEMT |
| Buy | Stock & Price |
DESCRIPTION
AvagoTechnologies'ATF-36077isanultra-low-noisePseudo morphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package. Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Additionally, the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performance to variations in input impedance match, making the design of broadband low noise amplifiers much easier. 77 PackageFEATURES
● PHEMT Technology● Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz
● High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz
● Low Parasitic Ceramic Microstrip Package
● Tape-and-Reel Packing Option Available
APPLICATIONS
● 12 GHz DBS LNB (Low Noise Block)● 4 GHz TVRO LNB (Low Noise Block)
● Ultra-Sensitive Low Noise Amplifiers 25 20 Ga 1.2 15 360 NOISE FIGURE (dB) ASSOCIATED GAIN (dB) Pin Configuration 4 SOURCE 1 3 GATE DRAIN 2 SOURCE 0.8 10 NF[1] 0.4 0 0 4 8 12 16 20 FREQUENCY (GHz) Figure 1.
