DESCRIPTION
Avago Technologies’ This LNA has low noise and high linearity achieved through the use of Avago Technologies’ proprietary 0.25 m GaAs Enhancement-mode pHEMT process. The device is designed for optimum use from 450 MHz up to 1.5 GHz. The compact footprint and low profile coupled with low noise, high gain and high linearity make this an ideal choice as a low noise amplifier for cellular infrastructure applications such as LTE, GSM, CDMA, W-CDMA, CDMA2000 & TD-SCDMA. For optimum performance at lower frequency from 1.5 GHz up to 2.5 GHz, MGA-637P8 is recommended. For optimum performance at higher frequency from 2.5 GHz up to 4 GHz, MGA-638P8 is recommended. All these 3 products, MGA-636P8, MGA-637P8 and MGA-638P8 share the same package and pinout configuration. Pin Configuration and Package Marking 2.0 x 2.0 x 0.75 mm3 8-lead DFN [1] [8] [2] 36X [7] [3] [6] [4] [5] [8] [1] [7] [2] [6] GND [3] [5] [4] TOP VIEW Pin 1 – Not Used Pin 2 – RFinput Pin 3 – Vbias2 Pin 4 – Not Used Cen...
Avago Technologies
