Avic Technology AV2001
TO-92 Plastic-Encapsulate Transistors
FEATURES
Power dissipation PCM : 0.6 Collector current ICM : 0.7 Collector-base voltage V(BR)CBO : 30 1. EMITTER 2. COLLECTOR 3. BASE Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æELECTRICAL CHARACTERISTICS
£¨ Tamb=25¡æ unless otherwise 1 2 3 specified£© Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) Test conditions MIN 30 25 5 MAX UNIT V V V Ic=100µA £¬IE=0 IC=10mA , IB=0 IE=100µA£¬IC=0 VCB=30 V , IE=0 VCE=20 V , IB=0 VEB=5 V , IC=0 0.1 0.1 0.1 90 400 0.6 1.2 µA µA µA VCE=1V, IC=100m A IC=700mA, IB= 70m A IC= 700mA, IB=70mA VCE=6V, IC= 10mA V V Transition frequency f T 50 MHz f = 30MHz CLASSIFICATION OF hFE Rank Range M 90-180 L 135-270 K 200-400 Copyright @vic Electronics Corp.