Avic Technology AV3906
TO-92 Plastic-Encapsulate Transistors
FEATURES
Power dissipation PCM : 0.625 W(Tamb=25℃) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ TO—92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEo IEBO HFE(1) DC current gain HFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE= -1 V , IC=-50 mA IC= -50 mA, IB= -5mA IC= -50mA, IB= -5 mA VCE= -20 V, IC= -10 mA 60 -0.4 -0.95 V V Test conditions Ic= -100 μA , IE=0 IC= -1 mA , IB=0 MIN -40 -40 -5 MAX UNIT V V V IE= -100 μA, IC=0 VCB= -40 V , IE=0 VCB= -40 V , IB=0 VEB= -5 V , IC=0 VCE= -1 V , IC= -10 mA -0.1 -0.1 -0.1 100 300 μA μA μA Transition frequency fT f =100 MHz 250 MHz CLASSIFICATION OF HFE(1) Rank Range O 100-200 Y 200-300 G 300-400 Copyright © Avic Electronics Corp.