Avic AV1015
PNP Transistor
FEATURES
Power dissipation PCM : 0.4 Collector current W Tamb=25 ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ Tstg: -55 to +150 TO 92 1.EMITTER 2.COLLECTOR 3.BASE 123ELECTRICAL CHARACTERISTICS
Tamb=25 Parameter Symbol unless otherwise specified Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage V(BR)CBO V(BR)CEO Ic= -100 A IE=0 Ic= -0. 1 mA IB=0 -50 -50 V V Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)EBO ICBO IEBO IE= -100 A IC=0 VCB= -50 V IE=0 VEB= -5 V IC=0 -5 V -0.1 A -0.1 A DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage hFE 1 VCE(sat) VBE(sat) Transition frequency fT VCE= -6 V, IC= -2m A IC= -100mA, IB= -10 mA IC= -100 mA, IB= -10m A VCE= -10 V, IC= -1 mA f =30MHz 70 80 400 -0.3 V -1.1 V MHz CLASSIFICATION OF hFE(1) Rank Range O 70-140 Copyright @vic Electronics Corp. Y 120-240 1 GR 200-400 Website @vic AV1015 Copyright @vic Electronics Corp.