BL25N60 Overview
BL25N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit VDS@Tj.max 600 V ID 25 A RDS(ON).Typ 0.21 Ω Qg.Typ 91.
BL25N60 Key Features
- Fast Switching
- Low Crss (typical 20pF )
- 100% avalanche tested
- Improved dv/dt capability
- RoHS product