BLS65R165 Overview
BLS65R165, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit VDS@Tj.max 700 V ID 24 A RDS(ON).Typ 0.135.
BLS65R165 Key Features
- Fast Switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS product