Datasheet Summary
BETTER POWER
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 50mȍ
-20A
Description
The BP3318 utilized advanced processin gtechni ques to achieve the lowest possible on-resistance, extremel y efficient and cost-effectiveness device. The TO-252 package is universally used for mercial-industrial applications.
Features
- Simple Drive Requirement
- Lower Gate Charge
- Fast Switching
Package Dimensions
TO-252
REF.
A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00
2.30 REF. 0.70 0.90 0.60 0.90
REF.
G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55
0 0.15 0.90 1.50 5.40 5.80 0.80...
