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BP3318 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The BP3318 utilized advanced processin gtechni ques to achieve the lowest possible on-resistance, extremel y efficient and cost-effectiveness device.

The TO-252 package is universally used for commercial-industrial applications.

Key Features

  • Simple Drive Requirement.
  • Lower Gate Charge.
  • Fast Switching Package Dimensions TO-252 3318 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Di.

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Datasheet Details

Part number BP3318
Manufacturer BETTER POWER
File Size 177.36 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet BP3318 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BETTER POWER BP3318 BP3318 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 50mȍ -20A Description The BP3318 utilized advanced processin gtechni ques to achieve the lowest possible on-resistance, extremel y efficient and cost-effectiveness device. The TO-252 package is universally used for commercial-industrial applications. Features *Simple Drive Requirement *Lower Gate Charge *Fast Switching Package Dimensions TO-252 3318 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.