BL S8550
Silicon Epitaxial Planar Transistor
FEATURES
z z z High Collector Current.(IC= -500mA) Complementary To S8050. Excellent HFE Linearity. Production specification S8550 Pb Lead-freeAPPLICATIONS
z High Collector Current. SOT-23 ORDERING INFORMATION Type No. S8550 Marking 2TY Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value -40 -25 -5 -500 300 -55~150 Units V V V mA mW ℃ Document number: BL/SSSTC080 Rev.A 1 BL Galaxy Electrical Silicon Epitaxial Planar TransistorELECTRICAL CHARACTERISTICS
@ Ta=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base Production specification S8550 unless otherwise specified MIN -40 -25 -5 -0.1 -0.1 -0.1 120 50 -0.6 -1.2 150 V V MHz 350 MAX UNIT V V V μA μA μA Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE Test conditions...