BL S9011
NPN Silicon Epitaxial Planar Transistor
| Part No. | S9011 |
|---|---|
| Datasheet | S9011 Download |
| Manufacturer |  BL |
| Description | NPN Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
z Collec tor Current.(IC= 30mA） z Power dissipation.(PC=200mW) Production specification S 9011 Pb Lead-freeAPPLICATIONS
z AM converter, AM/FM if amplifier general purpose transistor. ORDERING INFORMATION Type No. S 9011 Marking 1T SOT-23 Package Code S OT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 50 V 30 V 5V 30 mA 200 mW -55~150 ℃ UnitsELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter S Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Output capacitance Document number: BL/SSSTC126 Rev.A ymbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions...