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BR8810MF - N-CHANNEL DOUBLE MOSFET

General Description

SOT23-6 N MOS 。 ESD 。 N-channel Double MOSFET in a SOT23-6 Plastic Package.

It is ESD protested.

Key Features

  • , RDS(on),。 advanced trench technology to provide excellent RDS(on), low gate charge. VDSS=20V/VGSS=±12V ID=7A RDS(ON)=16mΩ(typ. )@VGS=4.5V RDS(ON)=19mΩ(typ. )@VGS=2.5V RDS(ON)=24mΩ(typ. )@VGS=1.8V /.

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Datasheet Details

Part number BR8810MF
Manufacturer BLUE ROCKET ELECTRONICS
File Size 1.39 MB
Description N-CHANNEL DOUBLE MOSFET
Datasheet download datasheet BR8810MF Datasheet

Full PDF Text Transcription for BR8810MF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BR8810MF. For precise diagrams, and layout, please refer to the original PDF.

BR8810MF Rev.D Oct.-2015 / Descriptions SOT23-6 N MOS 。 ESD 。 N-channel Double MOSFET in a SOT23-6 Plastic Package. It is ESD protested. / Features , RDS(on),。 advanced...

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Plastic Package. It is ESD protested. / Features , RDS(on),。 advanced trench technology to provide excellent RDS(on), low gate charge. VDSS=20V/VGSS=±12V ID=7A RDS(ON)=16mΩ(typ.)@VGS=4.5V RDS(ON)=19mΩ(typ.)@VGS=2.5V RDS(ON)=24mΩ(typ.)@VGS=1.8V / Applications ,PWM 。 Use as Load Switch or PWM application. / Equivalent Circuit DATA SHEET / Pinning **** 1 2 3 6 5 4 / Marking 。See Marking Instructions http://www.fsbrec.com 1/9 BR8810MF Rev.D Oct.