With built-in bias resistors, simplify circuit design, reduce a quantity of parts and manufacturing process. /Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VCC -50 V -12 V
VIN 5.0 V
Ic
-500
mA
Pd 200 mW Tj 150 ℃ Tstg -55～150 ℃
/Electrical characteristics(Ta=25℃)
Symbol
VI(off) VI(on) VO(on) II IO(off) GI fT R1 R2/R1
Test condition
vCC=-5.0V
IO=-100μA
VO=-0.3V
IO=-20mA
IO =-50mA
II=-2.5mA
VI=-5.0V
VCC=-50V
VI=0V
VO=-5.0V
IO=-50mA
VCE=-10V IE=5.0mA f=100MHz
Mi.
Full PDF Text Transcription for DTB123YK (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
DTB123YK. For precise diagrams, and layout, please refer to the original PDF.
DTB123YK(3RA123YK) PNP /SILICON PNP DIGITAL TRANSISTOR :、、。 Purpose: Switching, inverter circuit, interface circuit and driver circuit applications. :，，。 Features: With b...
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terface circuit and driver circuit applications. :，，。 Features: With built-in bias resistors, simplify circuit design, reduce a quantity of parts and manufacturing process. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCC -50 V -12 V VIN 5.0 V Ic -500 mA Pd 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VI(off) VI(on) VO(on) II IO(off) GI fT R1 R2/R1 Test condition vCC=-5.0V IO=-100μA VO=-0.3V IO=-20mA IO =-50mA II=-2.5mA VI=-5.0V VCC=-50V VI=0V VO=-5.0V IO=-50mA VCE=-10V IE=5.0mA f=100MHz Min -2.0 56 1.54 3.6 Rating Typ -0.1 200 2.2 4.
DTB123YK Datasheet
