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KRC231S - SILICON NPN DIGITAL TRANSISTOR

Key Features

  • With built-in resistors, simplify circuit design, reduce a quantity of parts and manufacturing process. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 30 V VCEO 15 V VEBO 5.0 V IC 600 mA PC 200 mW Tj 150 ℃ Tstg -55~150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO IC=50μA IE=0 VCEO IC=1.0mA IB=0 VEBO IE=50μA IC=0 ICBO VCB=30V IE=0 hFE VCE=5.0V IC=50mA VCE(sat) IC=50mA IB=2.5mA fT VCE=10V IC=50mA f=100MHz R1 Ron f=1kHz IB=1.

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Datasheet Details

Part number KRC231S
Manufacturer BLUE ROCKET ELECTRONICS
File Size 183.25 KB
Description SILICON NPN DIGITAL TRANSISTOR
Datasheet download datasheet KRC231S Datasheet

Full PDF Text Transcription for KRC231S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for KRC231S. For precise diagrams, and layout, please refer to the original PDF.

KRC231S(3RC231S) NPN /SILICON NPN DIGITAL TRANSISTOR :,,。 Purpose: Switching, audio muting, interface circuit and driver circuit applications. : ,,。 Features: With built-...

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e circuit and driver circuit applications. : ,,。 Features: With built-in resistors, simplify circuit design, reduce a quantity of parts and manufacturing process. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 30 V VCEO 15 V VEBO 5.0 V IC 600 mA PC 200 mW Tj 150 ℃ Tstg -55~150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO IC=50μA IE=0 VCEO IC=1.0mA IB=0 VEBO IE=50μA IC=0 ICBO VCB=30V IE=0 hFE VCE=5.0V IC=50mA VCE(sat) IC=50mA IB=2.5mA fT VCE=10V IC=50mA f=100MHz R1 Ron f=1kHz IB=1.0mA VIN=0.3V /Marking:HNW Min 30 15 5.