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KSR1102 - SILICON NPN DIGITAL TRANSISTOR

Key Features

  • With built-in bias resistors, simplify circuit design, reduce a quantity of parts and manufacturing process. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 50 V VCEO 50 V VEBO 10 V IC 100 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO ICBO hFE VCE(sat) fT Cob VI(off) VI(on) R1 R1/R2 IC=10μA IC=100μA VCB=40V VCE=5.0V IC=10mA VCE=5.0mA VCB=10V VCE=5.0V VCE=0.3V IE=0 /Marking: HR02 IE=0.

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Datasheet Details

Part number KSR1102
Manufacturer BLUE ROCKET ELECTRONICS
File Size 492.46 KB
Description SILICON NPN DIGITAL TRANSISTOR
Datasheet download datasheet KSR1102 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KSR1102(3RC1102) NPN /SILICON NPN DIGITAL TRANSISTOR :、、。 Purpose: Switching, inverter circuit, interface circuit and driver circuit applications. :，，。 Features: With built-in bias resistors, simplify circuit design, reduce a quantity of parts and manufacturing process. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 50 V VCEO 50 V VEBO 10 V IC 100 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO ICBO hFE VCE(sat) fT Cob VI(off) VI(on) R1 R1/R2 IC=10μA IC=100μA VCB=40V VCE=5.0V IC=10mA VCE=5.0mA VCB=10V VCE=5.0V VCE=0.3V IE=0 /Marking: HR02 IE=0 IB=0 IE=0 IC=5.0mA IB=0.5mA IC=10V f=1.