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2SC3199 NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range
1. Emitter 2. Collector 3. Base TO-92 Plastic Package
Symbol VCBO VCEO VEBO IC IE Ptot Tj Tstg
Value 50 50 5 150 -150 400 150
- 55 to + 150
Unit V V V mA mA
mW OC OC
Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ. Max.
2SC3199 Datasheet
