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A1206 - PNP Silicon Epitaxial Planar Transistor

Features

  • ․High frequency current gain ․High speed switching ․Small output capacitance ․Low collector saturation voltage 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (D. C. ) Collector Current (Pulse).
  • Power Dissipation Junction Temperature Storage Temperature Range.
  • PW≦2ms, Duty Cycle≦50% Symbol -VCBO -VCEO -VEBO -IC -IC Ptot Tj TS.

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Datasheet Details

Part number A1206
Manufacturer BLUECOLOUR
File Size 68.09 KB
Description PNP Silicon Epitaxial Planar Transistor
Datasheet download datasheet A1206 Datasheet
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    2SA1206 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. On special request, these transistors can be manufactured in different pin configurations. Features ․High frequency current gain ․High speed switching ․Small output capacitance ․Low collector saturation voltage 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (D.C.) Collector Current (Pulse)* Power Dissipation Junction Temperature Storage Temperature Range *PW≦2ms, Duty Cycle≦50% Symbol -VCBO -VCEO -VEBO -IC -IC Ptot Tj TS Value 15 15 4.
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