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ESD5B5.0ST1G-N - ESD Protection Diode

Key Features

  • 75Watts peak pulse power (tp = 8/20μs).
  • Bidirectional configurations.
  • Solid-state silicon-avalanche technology.
  • Low clamping voltage.
  • Low leakage current.
  • IEC 61000-4-2 ±25kV contact ±25kVair.
  • IEC 61000-4-4 (EFT) 40A (5/50ns).
  • IEC 61000-4-5 (Lightning) 5A (8/20μs) ESD5B5.0ST1G-N ESD Protection Diode ».

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Datasheet Details

Part number ESD5B5.0ST1G-N
Manufacturer BORN
File Size 650.30 KB
Description ESD Protection Diode
Datasheet download datasheet ESD5B5.0ST1G-N Datasheet

Full PDF Text Transcription (Reference)

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»Features ■ 75Watts peak pulse power (tp = 8/20μs) ■ Bidirectional configurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ IEC 61000-4-2 ±25kV contact ±25kVair ■ IEC 61000-4-4 (EFT) 40A (5/50ns) ■ IEC 61000-4-5 (Lightning) 5A (8/20μs) ESD5B5.0ST1G-N ESD Protection Diode »Applications ■ Microprocessor based equipment ■ Personal Digital Assistants (PDA’s) ■ Notebooks, Desktops, and Servers ■ Portable Instrumentation ■ Pagers Peripherals »Mechanical Data ■ SOD523 package ■ Molding compound flammability rating: UL 94V-0 ■ Packaging: Tape and Reel ■ RoHS/WEEE Compliant »Schematic & PIN Configuration Revision 2018 SOD-523 www.born-tw.com 1 /4 ESD5B5.