PESD12VL2BT-N - ESD Protection Diode Array

Key Features

350 Watts peak pulse power (tp =8/20μs).
Bidirectional configurations.
Solid-state silicon-avalanche technology.
Low clamping voltage.
Low leakage current.
IEC 61000-4-2 ±30kV contact ±30kVair.
IEC 61000-4-4 (EFT) 40A(5/50ns).
IEC 61000-4-5 (Lightning) 12A(8/20μs) PESD12VL2BT-N ESD Protection Diode Array ».

PESD12VL2BT-N esd protection diode array by BORN - Datasheet Preview

Datasheet Details

Part number	PESD12VL2BT-N
Manufacturer	BORN
File Size	597.91 KB
Description	ESD Protection Diode Array
Datasheet	PESD12VL2BT-N Datasheet

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Full PDF Text Transcription (Reference)

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»Features ■ 350 Watts peak pulse power (tp =8/20μs) ■ Bidirectional configurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ IEC 61000-4-2 ±30kV contact ±30kVair ■ IEC 61000-4-4 (EFT) 40A(5/50ns) ■ IEC 61000-4-5 (Lightning) 12A(8/20μs) PESD12VL2BT-N ESD Protection Diode Array »Applications ■ Dataline ■ Automatic Teller Machines ■ Net works ■ Power line »Mechanical Data ■ SOT-23 package ■ Molding compound flammability rating: UL 94V-0 ■ Packaging: Tape and Reel ■ RoHS/WEEE Compliant »Schematic & PIN Configuration 1 2 Revision 2018 1 33 2 SOT-23 (Top View) www.born-tw.