- Part: PESD24VS2UT-N
- Description: ESD Protection Diode Array
- Category: Diode
- Manufacturer: BORN
- Size: 942.72 KB
Key Features
- 300 Watts peak pulse power (tp = 8/20μs)
- Bidirectional and unidirectionalconfigurations
- Solid-state silicon-avalanche technology
- Low clamping voltage
- Low leakage current
- IEC 61000-4-2 ±30kV contact ±30kV air
- IEC 61000-4-4 (EFT) 40A(5/50ns)
- IEC 61000-4-5 (Lightning) 6A(8/20μs)
Datasheets by Manufacturer
- PESD24VS2UT — NXP Semiconductors — Double ESD protection diodes
- PESD24VS2UT — Nexperia — Double ESD protection diode
- PESD24VS2UAT — NXP Semiconductors — Double ESD protection diodes in SOT23 package
- PESD24VS2UQ — NXP Semiconductors — Double Esd Protection Diode
- PESD24VS1UA — NXP Semiconductors — Unidirectional ESD protection diode
- PESD24VS1UL — NXP Semiconductors — Unidirectional ESD protection diodes
- PESD24VS1UA-Q — Nexperia — Unidirectional ESD protection diode
- PESD24VS5UD — NXP Semiconductors — Fivefold ESD protection diode arrays
- PESD24VS1ULD — Nexperia — Unidirectional ESD protection diode
- PESD24VL1BA — NXP Semiconductors — Low capacitance bidirectional ESD protection diodes
