PESD24VS2UT-N - ESD Protection Diode Array

Key Features

300 Watts peak pulse power (tp = 8/20μs).
Bidirectional and unidirectionalconfigurations.
Solid-state silicon-avalanche technology.
Low clamping voltage.
Low leakage current.
IEC 61000-4-2 ±30kV contact ±30kV air.
IEC 61000-4-4 (EFT) 40A(5/50ns).
IEC 61000-4-5 (Lightning) 6A(8/20μs) PESD24VS2UT-N ESD Protection Diode Array ».

PESD24VS2UT-N esd protection diode array by BORN - Datasheet Preview

Datasheet Details

Part number	PESD24VS2UT-N
Manufacturer	BORN
File Size	942.72 KB
Description	ESD Protection Diode Array
Datasheet	PESD24VS2UT-N Datasheet

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Full PDF Text Transcription (Reference)

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»Features ■ 300 Watts peak pulse power (tp = 8/20μs) ■ Bidirectional and unidirectionalconfigurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ IEC 61000-4-2 ±30kV contact ±30kV air ■ IEC 61000-4-4 (EFT) 40A(5/50ns) ■ IEC 61000-4-5 (Lightning) 6A(8/20μs) PESD24VS2UT-N ESD Protection Diode Array »Applications ■ Dataline ■ Automatic Teller Machines ■ Net works ■ Power line »Mechanical Data ■ SOT-23 package ■ Molding compound flammability rating: UL 94V-0 ■ Packaging: Tape and Reel ■ RoHS/WEEE Compliant »Schematic & PIN Configuration 11 3 3 2 2 SOT-23 (Top View) Revision 2018 www.born-tw.