PESD3V3S1BA-N - ESD Protection Diode

Key Features

100Watts peak pulse power (tp =8/20μs).
Bidirectional configurations.
Solid-state silicon-avalanche technology.
Low clamping voltage.
Low leakage current.
IEC 61000-4-2 ±25kV contact ±25kV air.
IEC 61000-4-4 (EFT) 40A(5/50ns).
IEC 61000-4-5 (Lightning) 10A(8/20μs) PESD3V3S1BA-N ESD Protection Diode ».

PESD3V3S1BA-N esd protection diode by BORN - Datasheet Preview

Datasheet Details

Part number	PESD3V3S1BA-N
Manufacturer	BORN
File Size	702.85 KB
Description	ESD Protection Diode
Datasheet	PESD3V3S1BA-N Datasheet

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»Features ■ 100Watts peak pulse power (tp =8/20μs) ■ Bidirectional configurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ IEC 61000-4-2 ±25kV contact ±25kV air ■ IEC 61000-4-4 (EFT) 40A(5/50ns) ■ IEC 61000-4-5 (Lightning) 10A(8/20μs) PESD3V3S1BA-N ESD Protection Diode »Applications ■ Microprocessor based equipment ■ Personal Digital Assistants (PDA’s) ■ Notebooks, Desktops, and Servers ■ Portable Instrumentation ■ Pagers Peripherals »Mechanical Data ■ SOD523 package ■ Molding compound flammability rating: UL 94V-0 ■ Packaging: Tape and Reel ■ RoHS/WEEE Compliant »Schematic & PIN Configuration Revision 2018 SOD-523 www.born-tw.