SMBJ6.8A - Transinet Voltage Suppression Diode

Key Features

SMBJ6.8(C)A Transinet Voltage Suppression Diode.
Peak power dissipation 600W @10 x 1000 us Pulse.
Low profile package.
Excellent clamping capability.
Glass passivated junction.
Fast response time: typically less than 1ps from 0 Volts to BV min.
IEC 61000-4-2 ESD 30KV(Air), 30KV(Contact).
ESD protection of data lines in accordance with IEC 61000-4-2.
EFT protection of data lines in accordance with IEC 61000-4-4.
Halogen free and RoHS compliant.

SMBJ6.8A transinet voltage suppression diode by BORN - Datasheet Preview

Datasheet Details

Part number	SMBJ6.8A
Manufacturer	BORN
File Size	2.33 MB
Description	Transinet Voltage Suppression Diode
Datasheet	SMBJ6.8A Datasheet

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SMBJ6.8CA	Transinet Voltage Suppression Diode

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»Features SMBJ6.8(C)A Transinet Voltage Suppression Diode ■ Peak power dissipation 600W @10 x 1000 us Pulse ■ Low profile package. ■ Excellent clamping capability. ■ Glass passivated junction. ■ Fast response time: typically less than 1ps from 0 Volts to BV min ■ IEC 61000-4-2 ESD 30KV(Air), 30KV(Contact) ■ ESD protection of data lines in accordance with IEC 61000-4-2 ■ EFT protection of data lines in accordance with IEC 61000-4-4 ■ Halogen free and RoHS compliant ■ Lead-free finish »Mechanical Characteristics SMB Symbol ■ CASE: SMB (DO-214AA) Molded Plastic over glass passivated junction. ■ Mounting Position: Any ■ Polarity: by cathode band denotes uni-directional device, none cathode band denotes bi-directional device.